V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

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ژورنال

عنوان ژورنال: IEEE Journal of the Electron Devices Society

سال: 2017

ISSN: 2168-6734

DOI: 10.1109/jeds.2016.2630499