V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V
نویسندگان
چکیده
منابع مشابه
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A $mu$-way $(v,k,t)$ $trade$ of volume $m$ consists of $mu$ disjoint collections $T_1$, $T_2, dots T_{mu}$, each of $m$ blocks, such that for every $t$-subset of $v$-set $V$ the number of blocks containing this t-subset is the same in each $T_i (1leq i leq mu)$. In other words any pair of collections ${T_i,T_j}$, $1leq i< j leq mu$ is a $(v,k,t)$ trade of volume $m$. In th...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2017
ISSN: 2168-6734
DOI: 10.1109/jeds.2016.2630499